Image sensors including shifted isolation structures
US10249666B2 · kind B2 · utility
7Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | May 25, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jun 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.