Patent · US Active

Low-noise CMOS image sensor

US10249671B2 · kind B2 · utility

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13Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Arnaud Peizerat · Grenoble, FR

Key dates

Filing date	Nov 13, 2017
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Nov 13, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/80373
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A CMOS pixel including a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a second MOS transistor connecting the sense node to a potential VDDH; and a third MOS transistor having its gate connected to the sense node, the transistors having a same gate insulator thickness, wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference VDDH-GND is greater than the nominal voltage of the third MOS transistor, and wherein the body or drain region of the third transistor is connected to a potential VL between potentials VDDH and GND.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.