Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor
US10249707B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A laterally diffused metal oxide semiconductor field-effect transistor, comprising a substrate (110), a source electrode (150), a drain electrode (140), a body region (160), and a well region on the substrate, the well region comprising: an insertion-type well (122) having P-type doping, being arranged below the drain electrode and being connected to the drain electrode; N wells (124), arranged on two sides of the insertion-type well; and P wells (126), arranged next to the N wells and being connected to the N wells; the source electrode and the body region are arranged in the P well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.