Semiconductor device

US10249723B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Heimo Hofer · Bodensdorf, AT
• Martin Poelzl · Ossiach, AT
• Maximilian Roesch · Villach, AT
• Britta Wutte · Fürstenfeld, AT

Key dates

• Filing date: Dec 26, 2017
• Grant date: Apr 2, 2019
• Expiry date: Jan 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/668

Abstract

A semiconductor device includes a semiconductor body having a main surface and an active region surrounded by a non-active region. A trench extends from the main surface into the semiconductor body. The trench has a stripe configuration and extends laterally within the active region. A first electrode and a first insulator are in the trench. The first insulator insulates the first electrode from the semiconductor body. The first electrode is recessed in the trench and has a planar surface extending generally parallel with and below the main surface of the semiconductor body so as to define a well in the trench that is laterally confined by the first insulator. A second insulator is on the planar surface. A second electrode is within the well of the trench, and the second insulator insulates the second electrode from the first electrode.