Thin film transistor, method for manufacturing the same, array substrate, and display device
US10249735B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a gate electrode on a base substrate; forming a gate insulation layer with an even surface; forming a pattern of a polysilicon semiconductor layer; and forming patterns of a source electrode and a drain electrode. The step of forming the pattern of the polysilicon semiconductor layer includes: crystallizing the amorphous silicon layer, so as to form the polysilicon semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.