System and method for ion-selective, field effect transistor on flexible substrate

US10249741B2 · kind B2 · utility

Inventors

• Joseph T. Smith · Chandler, US
• Michael Goryll · Mesa, US
• Sahil Shah · Furlong, US
• Jennifer Blain Christen · Tempe, US
• John Stowell · Tempe, US

Key dates

• Filing date: May 13, 2015
• Grant date: Apr 2, 2019
• Expiry date: Aug 4, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).