Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
US10249747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring. The area consumed by the ring-shaped gate contact on the termination or edge region can be minimized. The upper surface of the gate ring and the upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.