Patent · US Active

Semiconductor device

US10249750B2 · kind B2 · utility

1Cited by

0References

3Claims

0Family size

Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

Sung-Bum Bae · Daejeon, KR
Sung Bock Kim · Daejeon, KR

Key dates

Filing date	Apr 30, 2018
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Apr 30, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.