Infrared light emitting diode

US10249777B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Chun-Kai Huang · Taoyuan, TW
• Chun-Yi Wu · New Taipei, TW
• Duxiang WANG · Xiamen, CN
• Chaoyu WU · Xiamen, CN
• Jin WANG · Xiamen, CN

Key dates

• Filing date: Jan 15, 2018
• Grant date: Apr 2, 2019
• Expiry date: Jan 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InxGa1-xAs. The cladding layer of InxGa1-xAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.