High-brightness light-emitting diode with surface microstructures
US10249791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.