Light emitting diode and method of manufacturing thereof

US10249796B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• BOE (Hebei) Mobile Display Technology Co., Ltd. · CN

Inventors

• Jianjie Wu · Beijing, CN
• Lili Chen · Beijing, CN
• Ruijun Dong · Beijing, CN
• Chenru Wang · Beijing, CN
• Guangquan Wang · Beijing, CN
• Haiwei Sun · Beijing, CN

Key dates

• Filing date: Dec 10, 2015
• Grant date: Apr 2, 2019
• Expiry date: Sep 5, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

The present application discloses a light emitting diode comprising a substrate; and a light emitting layer on the substrate. The light emitting layer comprises, an N-type doped layer; a quantum well active layer; and a P-type doped layer. At least one of the N-type doped layer and the P-type doped layer comprises an uneven layer adapted to concentrate light emitting from the light emitting layer.