Lateral silicon nanospikes fabricated using metal-assisted chemical etching
US10251390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (MacEtch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes. The antimicrobial article may include a component of an electronic device, a biomedical article, a household product, a food grade article, a transportation component, or a public building component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.