Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supply

US10253428B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Tianru Wu · Shanghai, CN
• Xuefu Zhang · Fremont, US
• Guangyuan Lu · Shanghai, CN
• Chao-Hsun Yang · Hsinchu, TW
• Haomin Wang · Shanghai, CN
• Xiaoming Xie · Jing County, CN
• Mianheng Jiang · Shanghai, CN

Key dates

• Filing date: Jun 4, 2015
• Grant date: Apr 9, 2019
• Expiry date: Jun 4, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C25D3/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.