Semiconductor pressure sensor
US10254184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2014 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Dec 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1815
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor of the invention, includes: a base body (1) including: a lead frame (4) having a first surface and a second surface; and a support (5) that supports the lead frame (4) and is made of a resin; a pressure sensor chip (2) provided on the first surface of the lead frame (4); and a controller (3) that is provided on the second surface of the lead frame (4), is implanted in the support (5), is formed in the shape having a plurality of surfaces, includes a stress relief layer (32, 33, 34, 35, 36) that is formed on at least one of the plurality of surfaces and has a Young's modulus lower than that of the support (5), and receives a sensor signal output from the pressure sensor chip (2) aid thereby outputs a pressure detection, the pressure sensor chip (2) at least partially overlapping the controller (3) in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.