Semiconductor optical modulation element
US10254624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/107
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type seminsulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitancl-oaded electrode is provided on the n-type clad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.