Selective area growth of semiconductors using patterned sol-gel materials
US10256093B2 · kind B2 · utility
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6References
15Claims
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Key dates
| Filing date | Nov 28, 2016 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Nov 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.