NAND flash memory with fast programming function
US10256244B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2018 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jan 15, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A NAND flash memory including a plurality of levels of cells and a plurality of bitlines. Each bitline corresponds to a plurality of program states, the program states include an Erase-state, a highest state and a plurality of middle states, wherein the bitline voltages of the middle states during programming are between the bitline voltage of the Erase-state and the bitline voltage of the highest state during programming, and the bitline voltages of the middle states during programming are different from each other. The bitline program voltages of middle states of a NAND flash memory are controlled, thus a higher initial programming voltage of wordlines can be set without causing over-programming on the middle states of the bitlines. Therefore, program time is saved, and the programming speed is increased to achieve a fast program function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.