Patent · US Active

Floating body contact circuit method for improving ESD performance and switching speed

US10256287B2 · kind B2 · utility

0Cited by

3References

15Claims

0Family size

Assignee

pSemi Corporation · US

Inventors

Eric S. Shapiro · San Diego, US
Matt Allison · Oceanside, US

Key dates

Filing date	Mar 2, 2018
Grant date	Apr 9, 2019
Priority date	—
Expiry date	Mar 2, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator (“SOI”) and Silicon-On-Sapphire (“SOS”) substrates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.