Method for oxidizing a substrate surface using oxygen
US10256290B2 · kind B2 · utility
3Cited by
16References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Nov 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.