Thin film transistor and method for fabricating the same, array substrate and display device
US10256315B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.