Organic photoelectronic device and image sensor
US10256414B2 · kind B2 · utility
12Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | May 11, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.