Electro-optical device with III-V gain materials and integrated heat sink
US10256603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Nov 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.