Methods of forming thin film and fabricating integrated circuit device using niobium compound
US10259836B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Nov 29, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | May 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L) Formula (1)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.