Resistive memory accelerator

US10261977B2 · kind B2 · utility

Assignee

• University of Rochester · US

Inventors

• Eby G. Friedman · Rochester, US
• Isaac Richter · East Amherst, US
• Xiaochen Guo · Rochester, US
• Mohammad Kazemi · Rochester, US
• Kamil Pas · Ridgewood, US
• Ravi Patel · Victor, US
• Engin Ipek · Pittsford, US
• Ji Liu · New Taipei, TW

Key dates

• Filing date: May 4, 2017
• Grant date: Apr 16, 2019
• Expiry date: May 4, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C13/0007
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.