Substrate having two semiconductor materials on insulator
US10262891B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes forming a first insulator layer on a first substrate of a first semiconductor material, implanting hydrogen ions into the first substrate to form a hydrogen-implanted layer, forming a recessed region in the first substrate, forming a second semiconductor material in the recessed region, and forming a second insulator layer over the second semiconductor material and the first substrate. The method also includes providing a second substrate with a third insulator layer disposed thereon, bonding the first substrate with the second substrate, and removing a lower portion of the first substrate at the hydrogen-implanted layer. A portion of the first substrate is removed to expose a surface of the second semiconductor material in the recessed region, thereby providing a layer of the first semiconductor material adjacent to a layer of the second semiconductor material on the second insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.