Semiconductor device
US10262912B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a first skirt portion molded from a first mold resin and a second skirt portion molded from a second mold resin are provided on a heat dissipating surface of a lead frame. Also, a thinly-molded portion is molded integrally with the second skirt portion from the second mold resin. According to this kind of configuration, adhesion between the thinly-molded portion and lead frame is high, and the semiconductor device with excellent heat dissipation and insulation is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.