Semiconductor device and method of manufacturing the same
US10263003B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2018 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0433
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device which has a non-volatile memory including: a semiconductor substrate; a tunnel insulating film formed on a surface of the semiconductor device; a floating gate formed on the tunnel insulating film; a memory cell transistor drain region and a memory cell transistor source region formed from the surface to an inside of the semiconductor substrate in a vicinity of both ends of the floating gate; a first interface formed between the semiconductor substrate and the tunnel insulating film; and a second interface formed between the floating gate and the tunnel insulating film. The first interface and the second interface form an uneven structure having a curvature that changes at an identical period with respect to a place in sectional view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.