RGBZ pixel unit cell with first and second Z transfer gates
US10263022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Sep 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/57
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.