Coating made of a semiconductor material
US10263043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABX3 or AB2X4; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.