Field effect transistor device
US10263068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/331
Abstract
A transistor device is described, the transistor comprising: a channel region in contact with the gate insulator and source and drain electrodes in contact with the channel region and arranged in a spaced-apart relationship. The channel region is configured with discontinuity in a material path of the channel, located between the source and drain electrodes. The channel being formed by a plurality of discrete semiconductor particles, distributed irregularly within the channel region, and a plurality of electrically conducting particles. The electrically conducting particles connect at least some of said semiconducting particles to one another to provide continuous path for electric coupling between said at least some semiconductor particles, forming an electrical path between the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.