Fabrication method of nitride light emitting diodes

US10263139B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Hsiang-lin HSIEH · Xiamen, CN
• Zhibo XU · Longbeilingcun, CN
• Cheng Hung Lee · Hsinchu, TW
• Chan-Chan Ling · Wuhu, CN
• Chang-Cheng Chuo · Hsinchu, TW
• Chia-Hung Chang · Xiamen, CN

Key dates

• Filing date: Jan 8, 2017
• Grant date: Apr 16, 2019
• Expiry date: Mar 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815

Abstract

A fabrication method of a nitride semiconductor LED includes, an AlxInyGa1-x-yN material layer is deposited by CVD between an AlN thin film layer by PVD and a gallium nitride series layer by CVD, to reduce the stress effect between the AlN thin film layer and the nitride layer, improve the overall quality of the LED and efficiency. An AlN thin film layer is deposited on a patterned substrate having a larger depth by PVD, and a thin nitrogen epitaxial layer is deposited on the AIN thin film layer by CVD, which reduces the stress by reducing the thickness of the epitaxial layer and improves warpage of the wafer and electric uniformity of the single wafer; the light extraction efficiency is improved by using the large depth patterned substrate; further, the doping of high-concentration impurity in the active layer effectively reduces voltage characteristics without affecting leakage, thereby improving the overall yield.