Semiconductor device
US10263177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Nov 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
Abstract
The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.