Adaptive in-rush current control for minimizing MOSFET peak temperature upon voltage step
US10263414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Mar 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/004
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a pass MOSFET is coupled in series between an input voltage and a load, and a bypass capacitor is connected in parallel with the load. In response to a voltage step across the MOSFET, the MOSFET is adaptively controlled to conduct an in-rush current of 2ICL=2IL during the bypass capacitor 12 charging time, where ICL is the capacitive current and IL is the load current. This optimizes the in-rush current to achieve a minimum peak temperature of the MOSFET. In one embodiment, a ramp capacitor connected to the drain of the MOSFET is part of a feedback path that tracks the MOSFET drain voltage to control the gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.