ALD metal coatings for high Q MEMS structures
US10266398B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | May 8, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0181
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a Microelectromechanical System (MEMS) resonator includes providing a dielectric substrate defining a resonator and depositing a conductive coating having a resistivity of approximately 1 to 50 μΩ-cm on that substrate by Atomic Layer Deposition (ALD). A resonator fabricated according to this process includes a dielectric substrate defining a resonator and a conductive coating having a resistivity of approximately 1 to 50 μΩ-cm for electrically coupling the resonator to electronics. Another method for fabricating a MEMS resonator includes providing a dielectric substrate defining a resonator, depositing an aluminum oxide film on that substrate by ALD, and depositing a noble metal film on the aluminum oxide film, also by ALD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.