Patent · US Active

Processor memory architecture

US10268382B2 · kind B2 · utility

2Cited by
1References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 28, 2016
Grant dateApr 23, 2019
Priority date
Expiry dateMar 15, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02D10/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A processing device includes a first memory interface for accessing a first memory device of a main memory. Each first memory interface is compatible with Low-Power Double-Data-Rate (LPDDR) signaling. The processing device further includes a second memory interface, which has different signaling characteristics from the first memory interface, for accessing a second memory device of the main memory. The second memory device has an access latency higher than the first memory device and lower than a secondary storage device. The first memory device and the second memory device may be used as a dual memory or a two-tiered memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.