Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET
US10269293B2 · kind B2 · utility
3Cited by
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8Claims
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Key dates
| Filing date | Oct 10, 2016 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Nov 12, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/0264
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.