Method of selectively removing silicon nitride and single wafer etching apparatus thereof
US10269591B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Oct 23, 2013 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.