Semiconductor devices and methods of forming semiconductor devices
US10269808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | May 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.