Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes
US10269831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2014 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Aug 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
A semiconductor device includes, a plurality of oxide semiconductor TFTs including a first gate electrode, a first insulating layer in contact with the first gate electrode, an oxide semiconductor layer opposing the first gate electrode via the first insulating layer, a source electrode and a drain electrode which are connected with the oxide semiconductor layer, and an organic insulating layer covering only some of the plurality of oxide semiconductor TFTs, wherein the plurality of oxide semiconductor TFTs include a first TFT which is covered with the organic insulating layer and a second TFT which is not covered with the organic insulating layer, and the second TFT includes a second gate electrode opposing the oxide semiconductor layer via a second insulating layer, the second gate electrode being arranged to overlap with at least a portion of the first gate electrode with the oxide semiconductor layer interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.