Magnetoresistive element and magnetic memory

US10269866B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• TOHOKU UNIVERSITY · JP

Inventors

• Yushi Kato · Chofu, JP
• Tadaomi Daibou · Yokohama, JP
• Eiji Kitagawa · Seoul, KR
• Takao Ochiai · Ashikaga, JP
• Junichi Ito · Ise, JP
• Takahide Kubota · Shizuoka, JP
• Shigemi Mizukami · Sendai, JP
• Terunobu Miyazaki · Sendai, JP

Key dates

• Filing date: Jan 29, 2016
• Grant date: Apr 23, 2019
• Expiry date: Jan 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %≤x≤75 atm %, 25 atm %≤y≤55 atm %, x+y=100 atm %, and 0 atm %<z≤7 atm %.