LDMOS transistors and associated systems and methods

US10269916B2 · kind B2 · utility

Assignee

• Maxim Integrated Products, Inc. · US

Inventors

• John Xia · Fremont, US
• Marco A. Zuniga · Berkeley, US
• Badredin Fatemizadeh · Sunnyvale, US
• Vijay Parthasarathy · Sunnyvale, US

Key dates

• Filing date: May 23, 2017
• Grant date: Apr 23, 2019
• Expiry date: May 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A lateral double-diffused metal-oxide-semiconductor field effect transistor includes a silicon semiconductor structure, first and second gate structures, and a trench dielectric layer. The first and second gate structures are disposed on the silicon semiconductor structure and separated from each other in a lateral direction. The trench dielectric layer is disposed in a trench in the silicon semiconductor structure and extends at least partially under each of the first and second gate structures in a thickness direction orthogonal to the lateral direction.