Electrode material for organic semiconductor device, method for forming electrode pattern, and organic thin-film transistor
US10270049B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 13, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Apr 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6576
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor.An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic π-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic π-conjugated ligand is a ligand having at least one hydrophilic substituent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.