Electro-optic device
US10274757B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.