Method of forming funnel-like opening for semiconductor device structure
US10276378B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.