Method of manufacturing semiconductor device
US10276589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | May 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.