Semiconductor device and method for manufacturing the same
US10276679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | May 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
Abstract
A semiconductor device including a substrate, a first doped region, a second doped region, a gate, and a gate dielectric layer is provided. The substrate has a first conductive type. The first doped region is formed in the substrate and has a second conductive type. The second doped region is formed in the substrate and has the second conductive type. The gate is formed on the substrate and is disposed between the first and second doped regions. The gate dielectric layer is formed on the substrate and is disposed between the gate and the substrate. The gate dielectric layer includes a first region and a second region. The depth of the first region is different from the depth of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.