Semiconductor device, semiconductor device control method and optical switch
US10276780B2 · kind B2 · utility
0Cited by
6References
16Claims
0Family size
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Key dates
| Filing date | Jan 11, 2018 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Jan 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.