Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials

US10280186B1 · kind B1 · utility

Assignees

• JIANGSU NATA OPTO-ELECTRONIC MATERIALS CO. LTD. · CN
• Jiangnan University · CN

Inventors

• Xiao MA · Suzhou, CN
• Chongying Xu · New Milford, US
• Tzuhn-Yan Lin · Suzhou, CN
• Dongsheng Xu · Beijing, CN
• Yuqiang DING · 安丰镇, CN

Key dates

• Filing date: Dec 1, 2017
• Grant date: May 7, 2019
• Expiry date: Dec 1, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400° C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.