Ion-implanted, anti-reflective layer formed within sapphire material
US10280504B2 · kind B2 · utility
1Cited by
34References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2016 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/081
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sapphire structure including an ion-implanted, anti-reflective layer and a method of forming an ion-implanted, anti-reflective layer within a sapphire component is disclosed. The method includes forming an ion-implanted layer in a sapphire material at a first depth, and annealing the sapphire material to a second depth. The second depth may be greater than or equal to the first depth. The ion-implanted layer may have a first index of refraction, and the sapphire material may have a second index of refraction different from the first index of refraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.