Patent · US Active

Semiconductor sensor for gas concentration

US10281358B2 · kind B2 · utility

0Cited by

1References

9Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Andreas Haeffelin · Leinfelden, DE
Harald Guenschel · Baunach, DE
Janine Riedrich-Moeller · Warmbronn, DE
Marcus Ahles · Pfullingen, DE

Key dates

Filing date	Jan 26, 2017
Grant date	May 7, 2019
Priority date	—
Expiry date	Nov 26, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02A50/20
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor sensor includes a cavity; a fluid connection between the cavity and an inlet area; a pump diaphragm that bounds the cavity; and a measuring diaphragm that bounds the cavity. The fluid connection includes a diffusion channel having multiple openings in the inlet area or multiple diffusion channels having respectively an opening in the inlet area, and it is possible to close at least one of the openings using laser light in order to influence an effective length or an effective cross section of the fluid connection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.